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Miniaturized D-Band SPDT/DPDT Switches Using Series Triple Coupled Transformer Cores in 65-nm CMOS SOI
Conference proceeding

Miniaturized D-Band SPDT/DPDT Switches Using Series Triple Coupled Transformer Cores in 65-nm CMOS SOI

Nengxu Zhu, Yiting Zhang, Fanyi Meng and IEEE
IEEE MTT-S International Microwave Symposium digest, pp.601-604
IEEE MTT-S International Microwave Symposium
01/01/2025
DOI: https://doi.org/10.1109/IMS40360.2025.11103883

Abstract

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Science & Technology Technology Telecommunications
This paper presents a novel SPDT/DPDT switch topology using a series triple coupled transformer (STCT) core, suitable for miniaturized millimeter-wave and terahertz systems. By controlling the ports' impedances of the six-ports STCT core, the high- order band-pass/band-stop response is realized, featuring low transmission loss or high isolation between ports. Additionally, the core occupies a highly compact area, making it suitable for the design of 1x2/2x2 switches and switch matrices. Fabricated in a 65nm CMOS SOI process, D-band SPDT/DPDT switches using the STCT core achieve a minimum insertion loss of 2.4 dB and 4.0 dB, with isolation greater than 19 dB and 31 dB from 110 GHz to 148 GHz. The core area of SPDT/DPDT switches is only 0.0028 mm(2) and 0.0058 mm(2), respectively.

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