New insight into gate dielectric breakdown induced MOSFET degradation by novel percolation path resistance measurements

Conference proceeding

K. L Pey, V. L LO, C. H Tung, W Chandra, L. J Tang, D. S Ang, R Ranjan and ieee

2004 International Electron Devices Meeting, pp.717-720

IEEE International Electron Devices Meeting 2004 (IEDM technical digest)

2004

Abstract

Applied sciences

Diodes

Electronics

Exact sciences and technology

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Transistors

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Title: New insight into gate dielectric breakdown induced MOSFET degradation by novel percolation path resistance measurements
Creators - without role: K. L Pey - Nanyang Technological University
V. L LO - Nanyang Technological University
C. H Tung - Institute of Microelectronics
W Chandra - Nanyang Technological University
L. J Tang - Nanyang Technological University
D. S Ang - Nanyang Technological University
R Ranjan - Nanyang Technological University
ieee
Publication Details: 2004 International Electron Devices Meeting, pp.717-720
Conference: IEEE International Electron Devices Meeting 2004 (IEDM technical digest)
Publisher: IEEE
Number of pages: 4
Identifiers: 9914225109846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Conference proceeding