Nickel silicide formation on Si(100) and poly-Si with a presilicide N2+ implantation

Conference proceeding

Peer reviewed

P. S Lee, D Mangelinck, K. L Pey, J Ding, D. Z Chi, J. Y Dai and A See

Journal of electronic materials, Vol.30(12), pp.1554-1559

01/12/2001

Abstract

Applied sciences

Electronics

Exact sciences and technology

Impurity doping, diffusion and ion implantation technology

Microelectronic fabrication (materials and surfaces technology)

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: Nickel silicide formation on Si(100) and poly-Si with a presilicide N2+ implantation
Creators - without role: P. S Lee - Duke-NUS Medical School
D Mangelinck - Centre National de la Recherche Scientifique
K. L Pey - Duke-NUS Medical School
J Ding - National University of Singapore
D. Z Chi - Duke-NUS Medical School
J. Y Dai - ON Semiconductor (United States)
A See - ON Semiconductor (United States)
Publication Details: Journal of electronic materials, Vol.30(12), pp.1554-1559
Publisher: Institute of Electrical and Electronics Engineers
Number of pages: 6
Identifiers: 9914220709846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Conference proceeding