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Passive circuit designs toward terahertz using nanometer CMOS technology
Conference proceeding

Passive circuit designs toward terahertz using nanometer CMOS technology

Kaixue Ma, Leyu Zhang and Kiat Seng Yeo
Proceedings of the 2009 12th International Symposium on Integrated Circuits, pp.671-674
12/2009

Abstract

Band pass filters CMOS CMOS technology Microstrip filters Millimeter-wave Integrated Circuit Nanometer Passive circuits Power dividers Semiconductor thin films Silicon Submillimeter wave technology Substrates Terahertz Thin film circuits
This paper presents terahertz passive circuit design and investigation by using a 180 nanometer CMOS technology. A novel multimode bandpass filter and a power divider are designed by adopting a thin-film microstrip line, which uses silicon oxide layer of CMOS as the microstrip substrate. The circuit and full-wave electromagnetic results show that the proposed bandpass filter has a wide passband of 100~150 GHz and a return loss of better than 14 dB. The designed power divider can operate at 500 GHz which is the first reported design using a 180 nm CMOS process.

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