Physical analysis of Ti-migration in 33 Å gate oxide breakdown

Conference proceeding

K. L Pey, C. H Tung, W. H Lin and M. K Radhakrishnan

IEEE International Reliability Physics Symposium 2002, Vol.2002-, pp.210-215

2002 IEEE international reliability physics symposium proceedings (Dallas TX, 7-11 April 2002)

2002

Abstract

Applied sciences

Electronics

Exact sciences and technology

Interfaces

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Testing, measurement, noise and reliability

Transistors

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Title: Physical analysis of Ti-migration in 33 Å gate oxide breakdown
Creators - without role: K. L Pey - Duke-NUS Medical School
C. H Tung - Institute of Microelectronics
W. H Lin - Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D Street 2, Singapore 738406, Singapore
M. K Radhakrishnan - Institute of Microelectronics
Publication Details: IEEE International Reliability Physics Symposium 2002, Vol.2002-, pp.210-215
Conference: 2002 IEEE international reliability physics symposium proceedings (Dallas TX, 7-11 April 2002)
Publisher: IEEE
Number of pages: 6
Identifiers: 9914326909846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Conference proceeding