- Title
- QUANTITATIVE-ANALYSIS OF ELECTRON TRAPS IN ANNEALED SEMIINSULATING GALLIUM-ARSENIDE EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE WITH A NOVEL ZERO QUIESCENT BIAS VOLTAGE TRANSIENT CURRENT SPECTROSCOPY TECHNIQUE
- Creators - without role
- W S LauC H GooT C Chong
- Contributors - without role
- C J MinerW FordE R Weber
- Publication Details
- Semi-Insulating III-V Materials, Ixtapa, Mexico, 1992: Proceedings of the 7th Conference on Semi-Insulating III-V Materials, Ixtapa, Mexico, 21-24 April 1992, pp.153-156
- Publisher
- Iop Publishing Ltd
- Number of pages
- 4
- Identifiers
- 9911408309846
- Academic Unit
- Temasek Lab
- Language
- English
- Resource Type
- Conference proceeding
Conference proceeding
QUANTITATIVE-ANALYSIS OF ELECTRON TRAPS IN ANNEALED SEMIINSULATING GALLIUM-ARSENIDE EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE WITH A NOVEL ZERO QUIESCENT BIAS VOLTAGE TRANSIENT CURRENT SPECTROSCOPY TECHNIQUE
Semi-Insulating III-V Materials, Ixtapa, Mexico, 1992: Proceedings of the 7th Conference on Semi-Insulating III-V Materials, Ixtapa, Mexico, 21-24 April 1992, pp.153-156
01/01/1993
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