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Quantum well intermixing using argon plasma generated in a reactive-ion etching system on InGaAs/InGaAsP laser structures
Conference proceeding

Quantum well intermixing using argon plasma generated in a reactive-ion etching system on InGaAs/InGaAsP laser structures

D. Leong, H.S. Djie, L.K. Ang, IEEE and Ricky Ang
IEEE/LEOS Workshop on Fibre and Optical Passive Components 2002, pp.148-152
2002
DOI: https://doi.org/10.1109/FOPC.2002.1015818

Abstract

Annealing Argon Etching Indium gallium arsenide Photonic band gap Plasma applications Plasma properties Plasma waves Quantum well lasers Substrates
Quantum-well intermixing using an argon plasma, generated by a reactive-ion etching system, is demonstrated on InGaAs/InGaAsP quantum well laser structures. The parameters of the process were optimised by using Taguchi's method. Using an argon flowrate of 50 sccm, pressure of 30 mTorr and RF power of 480 W, a blue shift of 73 nm was obtained after exposure to the plasma for 5 minutes.

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