Robustness of self-aligned titanium silicide process: Improvement in yield of silicided devices with APM cleaning step

C W Lim; K H Lee; K L Pey; H Gong; A J Bourdillon; S K Lahiri; IEEE, ELECT DEVICES SOC

doi:10.1109/IITC.1998.704787

Back

Conference proceeding

Robustness of self-aligned titanium silicide process: Improvement in yield of silicided devices with APM cleaning step

C W Lim, K H Lee, K L Pey, H Gong, A J Bourdillon, S K Lahiri and IEEE, ELECT DEVICES SOC

PROCEEDINGS OF THE IEEE 1998 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, Vol.1998-, pp.187-189

IEEE International Interconnect Technology Conference IITC

01/01/1998

DOI: https://doi.org/10.1109/IITC.1998.704787

Abstract

Engineering

Engineering, Electrical & Electronic

Science & Technology

Technology

An additional cleaning technique is implemented in self-aligned silicide (SALICIDE) process. We discover that logic device yield is improved significantly with the additional ammonium peroxide mixture cleaning (APM-clean). This significant improvement is believed due to the reduction and tighter distribution achieved in both gate to source/drain leakage and junction leakage. In order to incorporate APM-clean in SALICIDE process, the stability of both C49 and C54 phase TiSi2 in APM solution is studied. We found that C54 phase TiSi2 shows good stability in APM solution. On the other hand, C49 phase TiSi2 exhibits an interesting line-width dependence etch-rate (greater than or equal to 1.38 Angstrom/sec), which resulted in higher sheet resistance.

Metrics

1 Record Views

1 Times Cited - Web of Science

Details

Title: Robustness of self-aligned titanium silicide process: Improvement in yield of silicided devices with APM cleaning step
Creators - without role: C W Lim - National University of Singapore
K H Lee
K L Pey
H Gong - National University of Singapore
A J Bourdillon - National University of Singapore
S K Lahiri - National University of Singapore
IEEE, ELECT DEVICES SOC
Publication Details: PROCEEDINGS OF THE IEEE 1998 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, Vol.1998-, pp.187-189
Series: IEEE International Interconnect Technology Conference IITC
Publisher: IEEE
Number of pages: 3
Identifiers: 9914228009846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Conference proceeding

Robustness of self-aligned titanium silicide process: Improvement in yield of silicided devices with APM cleaning step

Abstract

Metrics

Details

Singapore University of Technology and Design Social media