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Self-rectifying and forming-free unipolar HfOx based-high performance RRAM built by fab-avaialbe materials
Conference proceeding

Self-rectifying and forming-free unipolar HfOx based-high performance RRAM built by fab-avaialbe materials

X. A. Tran, B. Gao, J. F. Kang, X. Wu, L. Wu, Z. Fang, Z. R. Wang, K. L. Pey, Y. C. Yeo, A. Y. Du, …
2011 International Electron Devices Meeting, pp.31.2.1-31.2.4
12/2011
DOI: https://doi.org/10.1109/IEDM.2011.6131648

Abstract

Electrodes Hafnium compounds Nickel Resistance Silicon Switches Tin
In this paper, we report a high performance, forming-free and self-rectifying unipolar HfO x based RRAM fabricated by fab-available materials. Highlight of the demonstrated RRAM include 1) CMOS technology friendly materials and process, 2) excellent self-rectifying behavior in LRS (>;10 3 @ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices (number of word-line >;10 6 for worst case condition).

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