Sensitivity of on-wafer interconnects to CMOS process parameters at radio frequency

Xiaomeng Shi; Jianguo Ma; Erping Li; Kiat Seng Yeo; Manh Anh Do

doi:10.1109/EMCZUR.2006.215003

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Conference proceeding

Sensitivity of on-wafer interconnects to CMOS process parameters at radio frequency

Xiaomeng Shi, Jianguo Ma, Erping Li, Kiat Seng Yeo and Manh Anh Do

2006 17th International Zurich Symposium on Electromagnetic Compatibility : February 27, 2006-March 3, 2006, pp.590-593

2006

DOI: https://doi.org/10.1109/EMCZUR.2006.215003

Abstract

CMOS process

CMOS technology

Conductivity

Dielectric substrates

Integrated circuit interconnections

Integrated circuit technology

Radio frequency

Radiofrequency integrated circuits

Testing

Wireless communication

This paper investigates the sensitivity of the on-wafer interconnects to the Si CMOS process parameters. Experiments are conducted to emulate state-of-the-art and future technologies. S-parameters of the interconnect have been examined. The influence of the process parameters on the transmission and reflection capacities of the on-wafer interconnects are discussed

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Title: Sensitivity of on-wafer interconnects to CMOS process parameters at radio frequency
Creators - without role: Xiaomeng Shi - Nanyang Technological University
Jianguo Ma - Nanyang Technol. Univ
Erping Li
Kiat Seng Yeo - Nanyang Technological University
Manh Anh Do
Publication Details: 2006 17th International Zurich Symposium on Electromagnetic Compatibility : February 27, 2006-March 3, 2006, pp.590-593
Publisher: IEEE
Identifiers: 9912503809846
Academic Unit: Office of Provost
Language: English
Resource Type: Conference proceeding

Sensitivity of on-wafer interconnects to CMOS process parameters at radio frequency

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