Abstract
A multi-stackable memory device was fabricated using a photo cross-linkable copolymer. Once cross-linked, the polymer film became insoluble, making multi-level stacking possible. It can also be directly patterned using a photomask, reducing the numbers of processing steps. The memory device consisted of a polymer film sandwiched between two electrodes. The device could be switched from a high resistive state to a low resistive state using 4 V pulse, and back to its high resistive state using a 9 V pulse. Our device showed stable performance achieving more than 4000 times of write/erase cycles.