- Title
- Structural analysis of breakdown in ultrathin gate dielectrics using transmission electron microscopy
- Creators - without role
- K. L Pey - Nanyang Technological UniversityC. H Tung - Institute of MicroelectronicsL. J Tang - Nanyang Technological UniversityR Ranjan - Nanyang Technological UniversityM. K Radhakrishnan - National University of SingaporeW. H Lin - Chartered Semiconductor Manufacturing Ltd, 60, Woodlands Industrial Park D, Street 2, Singapore 738406, SingaporeS Lombardo - Istituto Nazionale di Fisica Nucleare, Sezione di CataniaF Palumbo - Istituto Nazionale di Fisica Nucleare, Sezione di Catania
- Publication Details
- Proceedings of the 11th International Symposium on the Physical & Failure Analysis of Integrated Circuits : IPFA 2004 : [July 5-8, 2004, Taiwan, pp.11-16
- Conference
- Proceedings of the 11th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2004)
- Publisher
- IEEE
- Number of pages
- 6
- Identifiers
- 9914220109846
- Academic Unit
- Engineering Product Development (EPD); Temasek Lab
- Language
- English
- Resource Type
- Conference proceeding
Conference proceeding
Structural analysis of breakdown in ultrathin gate dielectrics using transmission electron microscopy
Proceedings of the 11th International Symposium on the Physical & Failure Analysis of Integrated Circuits : IPFA 2004 : [July 5-8, 2004, Taiwan, pp.11-16
Proceedings of the 11th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2004)
2004
Metrics
1 Record Views