Abstract
Nanowires have been identified as a promising alternative for future electronics. A single coaxial nanowire photovoltaic device has been fabricated to power up nanoelectronic sensors and logic gates. The current work calculates and analyses the performance of the coaxial silicon nanowire using a semi-classical method. The current-voltage characteristics are calculated for both under dark and AM1.5G illumination. Some interesting phenomena is observed from the two-dimensional plot of the potential. Furthermore, the effect of the surface recombination, which is significant in nanoscale devices, is also studied.