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Study of the charge leakage of dual layer Pt metal nanocrystal-based high-κ/SiO2 flash memory cell - a relaxation current point of view
Conference proceeding

Study of the charge leakage of dual layer Pt metal nanocrystal-based high-κ/SiO2 flash memory cell - a relaxation current point of view

Y. N. Chen, K. L. Pey, K. E. J. Goh, Z. Z. Lwin, P. K. Singh, S. Mahapatra and IEEE
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp.1-4
07/2011
DOI: https://doi.org/10.1109/IPFA.2011.5992746

Abstract

Aluminum oxide Dielectrics Electric fields Flash memory cells Logic gates Nanocrystals Voltage measurement
By comparing the relaxation current with pure Al 2 O 3 layer, we postulate that the relaxation process of the dual layer Pt nanocrystal-based Al 2 O 3 /SiO 2 stack mainly arise from the charge leak of the metal nanocrystals, which probably follows the Poole-Frankel behavior. The extracted relaxation current from the metal nanocrystals and its charge leak time constant provide a simple and effective characterization tool to detect the retention property of this Flash memory cell.

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