Abstract
HfO2 high-kappa/TaN/TiN gate stacks n/p-MOSFETs have been studied. Ultrafast progressive breakdown (PBD) is polarity dependent and is found only in the case of substrate injection in metal gate n/p-MOSFETs. PBD transient of metal gate p-MOSFET is much slower than n-MOSFET in inversion mode stress.