Abstract
In this paper, a thermal analysis of Chalcogenide Random Access Memory (C-RAM) cell, a non-rotational nonvolatile phase change memory cell, was conducted. A three-dimensional finite-element method was used in the simulation of C-RAM cell. The thermal effect generated by applying an electric pulse was calculated and analyzed. The dependence of its thermal performances due to electrical and geometrical variations was also investigated. Temperature performances including temperature profiles and history, the heating and cooling rates, and heat flow characteristics were obtained and analyzed.