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Ultrafast nonlinear broadening in ultra-short ultra-silicon rich nitride waveguides
Conference proceeding

Ultrafast nonlinear broadening in ultra-short ultra-silicon rich nitride waveguides

Ju Won Choi, George F R Chen, Kelvin J A Ooi, Dawn T H Tan, Doris K T Ng and Tse Hui Dawn Tan
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Conference Proceedings, p.1
01/01/2017

Abstract

Bandwidths CMOS Near infrared radiation Nonlinearity Photon absorption Photonics Spectra
Conference Title: 2017 Opto-Electronics and Communications Conference (OECC) and Photonics Global Conference (PGC) Conference Start Date: 2017, July 31 Conference End Date: 2017, Aug. 4 Conference Location: Singapore, Singapore We study ultrafast spectral characteristics of our ultra-short ultra-slicon rich nitride (USRN) waveguide with large Kerr nonlinearity (γ∼550W−1/m) and negligible nonlinear loss. The output spectra of USRN ring resonator and short-length waveguide broaden around 2 times and 4 times wider than that in 500 fs input pulses, respectively. Negligible nonlinear loss including two-photon absorption at near-infrared wavelength rages is proven by the linear increase in both the output bandwidth and power versus input peak power up to 100 W. The bandwidth broadens by 200 nm per millimeter of USRN waveguide implying that our ultra-short USRN waveguide acquires higher spectra-broaden efficiency compared other CMOS-platforms operating at telecommunication bands.

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