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Universal HSPICE model for chalcogenide based phase change memory elements
Conference proceeding

Universal HSPICE model for chalcogenide based phase change memory elements

X.Q. Wei, L.P. Shi, R. Zhao, X.S. Miao, T.C. Chong, W. Rajan, B.S. Quek and ieee
Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference, pp.88-91
2004
DOI: https://doi.org/10.1109/NVMT.2004.1380812

Abstract

Amorphous materials Circuit simulation Crystalline materials Crystallization Electric resistance Nonvolatile memory Phase change materials Phase change memory Switches Temperature
We present a two terminal HSpice model for chalcogenide based phase change memory (CRAM) element. By including physical models of CRAM programming, this model can simulate not only the resistance change by different electrical pulses, but also temperature profile and crystalline fraction during the operation. Furthermore, it was successfully integrated with standard W/R circuit in memory technology. Output of sense amplifier vs writing current amplitude figure corresponded well with the typical R-I curve of CRAM elements.

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