Abstract
High power, high brightness semiconductor lasers had seen high demand in many applications across a diverse range of industries. The focus of this thesis is to fabricate a semiconductor laser using conventional techniques used in the microelectronic industry. These techniques include but are not limited to photolithography, wet and dry etching, and metal lift-off. Photomask for the laser was designed and the complete process to fabricate the semiconductor laser was developed. Comprehensive documentation in the process development is presented in this thesis. Finally, the fabricated laser was characterized and found to be emitting light. The light was measured using the spectrum analyser which displayed narrow linewidth peaks which is strong evidence of lasing occurring. The I-V characteristic of the laser shows that the laser chips behave like a usual diode however, an abnormally high contact resistance was calculated from the curve. Further investigation had to be done to obtain a complete understanding of the fabricated device.