Abstract
Phase change memories and RRAM (resistive random access memory) are both potential candidates that can replace DRAM (dynamic random access memory).To qualify as impressive storage-class memory, scalability and the ability of multi-level operation are the most of two advantages as compared to MRAM (magnetoresistive random access memory) and FRAM (ferroelectric random-access memory), but the cost of phase change memory is too high to practice in industries for now and there is still some potential RRAM that haven’t been discovered. In this work, we believe that phase change materials can be applied to the conversion layer of RRAM. However, the conversion mechanism of this type of memory device is not clear. According to some previous studies, it can be known that the device does not require a large amount of energy during operation, which means that the material does not have a violent phase change reaction. As a result, we believe that the operating mechanism of this component should be similar to a filament type CBRAM rather than PCM. Therefore, in the simulation, the resistance change of the filament under different conditions is discussed. Then design experiments to confirm whether the hypothesis is correct or not. The final experimental results are different from the assumptions. We analyze and define the correct operating mechanism of this component. The results of this analysis are critical to future development and increase the possibility that this device can be used in the industry.