Abstract
The Low Noise Amplifier (LNA) is the first key component in the receiving end of nearly every communication system in the world. The LNA is responsible for providing enough gain to the signal with the least distortion possible. In this work, a millimetre-wave (MMW) low power, high Gain LNA at center frequency 60 GHz is presented along with the analysis, design and measurement results. A three-transistor stacked cascode technology is adopted to achieve higher gain and improve the reverse isolation. NFET 65nm GF technology has been chosen for the design of the LNA at the transistor level. To reduce overall power consumption, the first and second stages of the amplifier share the same supply voltage and the current. At the input and output of amplifier, a LC load stage is utilized to achieve best input and output matching. The result shows a voltage gain of 20.5 dB, a noise figure is 5.5 dB, input and output return losses better than -22 dB, respectively and it dissipates 7.4 mW from 1.2 V DC supply. Cadence's Spectre simulator has been used to simulate the behaviour of circuit and active/passive components to get the results like S-parameters and so on.