Abstract
A novel high-speed sense amplifier for ultra-low-voltage SRAM applications is presented. It overcomes the long-unattended weaknesses of existing designs simply by forcing the data-lines to track the changes on the bit-lines. It has improved the sensing speed and the power consumption of the best prior art by 202 and 216%, respectively. Furthermore, the new design can operate down to a supply voltage of 0.9 V.