Abstract
The key considerations of low power injection‐locked oscillator (ILO) are analyzed. Using a supply injection topology, the proposed ILO is able to work at lower supply voltage with a good balance of other performances. Fabricated in Tower JAZZ 0.18 μm SiGe BiCMOS technology, a prototype of ILO with supply injection achieves an operating frequency ranges from 53.2 to 55.3 GHz with a minimum input power of −35 dBm for a fixed control voltage. Occupying a silicon area of 0.24 mm2, the core circuit consumes 3 mW from a 0.7 V power supply. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1912–1914, 2015