Abstract
This paper presents an ultra-wideband silicon-based amplifier designed to overcome the limitations of traditional transformer-based and distributed amplifier designs. The pro-posed amplifier is implemented in a 0.18 mu m SiGe BiCMOS process and operates over a frequency range of 4.5-37 GHz. It features a single-stage differential topology using a common-emitter/common-base (CE-CB) configuration, with a series RC network for negative feedback. An asymmetric differential T-coil structure is employed for broadband input and output matching. Simulation results show return losses better than-10 dB across the full frequency range. The amplifier achieves a peak small-signal gain of 10.2 dB, with gain flatness of +/- 0.9 dB. It consumes less than 10 mW of DC power and delivers an OP1dB between 6 and 12.7 dBm. The core occupies only 0.14 mm2, making it suitable for compact and low-power broadband systems.