Abstract
A bidirectional low-noise amplifier (LNA) is presented in this letter. By using transistor bias control and low-loss coplanar waveguide structures with defected ground shield as both interconnect traces and distributed passives, the proposed two-port bidirectional amplifier achieves a measured performance close to the stand-alone LNA from 54 to 65 GHz. The design is fabricated in a 0.18-μm SiGe BiCMOS process consuming a maximum 10.6-mA current from a 1.8-V supply voltage and occupies a 0.85-mm 2 core die area.