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A Fully Integrated 5-7-GHz Wi-Fi 7 FEM With a Gain-Noise Optimized LNA and a Parasitic-Absorbing T/R Interface
Journal article   Peer reviewed

A Fully Integrated 5-7-GHz Wi-Fi 7 FEM With a Gain-Noise Optimized LNA and a Parasitic-Absorbing T/R Interface

Pengfei Li, Yudan Zhang, Jiaming Zhao, Nengxu Zhu, Hao Shi, Fanyi Meng and Kaixue Ma
IEEE transactions on microwave theory and techniques, Vol.74(1), pp.298-311
01/2026

Abstract

Capacitors Co-design Finite element analysis front-end module (FEM) Gain Gallium arsenide gallium arsenide (GaAs) IEEE 80211be low-noise amplifier (LNA) Microwave amplifiers Noise p-HEMT Periodic structures power amplifier (PA) T/R switch (T/R SW) Transformers Wi-Fi 7 Wideband Wireless fidelity
This article presents a fully integrated Wi-Fi 7 front-end module (FEM) in a 0.25- \mu m GaAs p-HEMT process, featuring wideband operation, high efficiency, and a highly compact design. To address the stringent system requirements of Wi-Fi 7, this work introduces innovative circuit and co-design techniques. A novel feedforward capacitor structure (FCS) in the LNA enables simultaneous optimization of gain bandwidth and noise figure (NF) in a single-stage topology. Furthermore, the T/R interface is co-designed with an absorptive ESD protection scheme, utilizing a Y- \Delta transformation to absorb parasitic capacitance, which is critical for achieving a highly compact layout. The transmitter leverages a power-efficient PA with dynamic biasing to enhance back-off efficiency. Measurements of the 1.53-mm2 chip demonstrate an RX gain of 11.9-14.9 dB with a 1.65-2.3-dB NF. The transmitter delivers 25-29 dBm of output power with a peak PAE of 37% and meets the −43-dB EVM requirement for 4096-QAM signals under DPD. This work presents a viable path toward highly integrated, high-performance, and cost-effective FEMs for Wi-Fi 7 applications.

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