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A V-Band CMOS Divide-by-Three ILFD With Frequency-Dependent Injection Enhancement
Journal article   Peer reviewed

A V-Band CMOS Divide-by-Three ILFD With Frequency-Dependent Injection Enhancement

Junyi Sun, Chirn Chye Boon, Fanyi Meng, Xiang Yi and Wei Meng Lim
IEEE microwave and wireless components letters, Vol.25(11), pp.727-729
01/11/2015

Abstract

Engineering Engineering, Electrical & Electronic Science & Technology Technology
This letter presents a V-band divide-by-three injection-locked frequency divider (ILFD) with low power consumption and wide locking range, by using the novel frequency-dependent injection enhancement (FDIE) technique. The optimum tradeoff between amplitude and phase locking conditions of the FDIE circuit is first analyzed theoretically. Then a current-reused differential pre-amplifier loaded with a moderate-k transformer for FDIE circuit is proposed to obtain the greatest locking range under such trade-off. Fabricated in a 65 nm CMOS technology, the proposed ILFD prototype demonstrates a wide input locking range of 54.5-62.36 GHz (13.5%) and only 2.5 mA current consumption with 1.2 V supply.

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