Abstract
This brief presents an all-NMOS RF-DC rectifier with a wide high power conversion efficiency (high-PCE) input power range by utilizing gate voltage boosting technique (GVBT). The all-NMOS architecture combines the benefits of cross-coupled and GVBT-based diode-like rectifiers for maximum electron mobility and reduced the conduction losses. The GVBT applied to rectifying transistors not only reduces the reverse leakage current, but also enhances the conductivity. As a result, the PCE and the input power range are improved simultaneously. The proposed rectifier is fabricated with a 0.18-mu m standard CMOS technology. The measurement results show that the all-NMOS rectifier achieves 57.6% PCE, -14.8 dBm sensitivity and large than 20 dB high-PCE input power range with a 10 k Omega load.