A comprehensive geometrical and biasing analysis for latchup in 0.18-μm CoSi2 STI CMOS structure

Journal article

Peer reviewed

Wang-Ling Goh and Kiat-Seng Yeo

Solid-state electronics, Vol.48(12), pp.2109-2114

12/2004

Abstract

Applied sciences

Design. Technologies. Operation analysis. Testing

Electronics

Exact sciences and technology

Integrated circuits

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Transistors

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Title: A comprehensive geometrical and biasing analysis for latchup in 0.18-μm CoSi2 STI CMOS structure
Creators - without role: Wang-Ling Goh - Nanyang Technological University
Kiat-Seng Yeo - Nanyang Technological University
Publication Details: Solid-state electronics, Vol.48(12), pp.2109-2114
Publisher: Elsevier Science
Number of pages: 6
Identifiers: 9912386009846
Academic Unit: Office of Provost
Language: English
Resource Type: Journal article