Abstract
This paper presents a 132–140 GHz power amplifier (PA) array in 0.13‐µm SiGe BiCMOS technology. The four dielectric‐loaded end‐fire antennas are integrated with the PA array on chip. With the absence of the lossy power combining networks at the output, the presented PA array achieves a measured maximal effective isotropic radiated power of 29.7 dBm. The array size is only 6.14 × 2.49 mm2 and consumes 5.16 W from a single 4 V DC supply.