Abstract
In this letter, a low-cost alternative for forming high grade silicon germanium (SiGe) by a laser-induced crystallization of an amorphous Ge layer deposited directly on Si(+) preamorphized implantation Si substrate is demonstrated. The results show that a fully strained epitaxial SiGe layer on the Si (100) substrate can be obtained at laser fluence above the epitaxial threshold. This is due to a liquid-phase epitaxial regrowth process of the laser annealing induced melted layer. Below the epitaxial threshold, polycrystalline SiGe is formed due to explosive recrystallization process. Simultaneous boron activation is achieved with the SiGe formation, a result due to the high temperature induced by the laser annealing.