A study on the effect of incorporating nitrogen ions on titanium disilicide thin film formation for ULSI applications

Journal article

Peer reviewed

C. W Lim, A. J Bourdillon, H Gong, S. K Lahiri, K. L Pey and K. H Lee

Journal of materials science letters, Vol.18(9), pp.743-746

01/05/1999

Abstract

Applied sciences

Electronics

Exact sciences and technology

Microelectronic fabrication (materials and surfaces technology)

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: A study on the effect of incorporating nitrogen ions on titanium disilicide thin film formation for ULSI applications
Creators - without role: C. W Lim - National University of Singapore
A. J Bourdillon - National University of Singapore
H Gong - National University of Singapore
S. K Lahiri - National University of Singapore
K. L Pey - ON Semiconductor (United States)
K. H Lee - National University of Singapore
Publication Details: Journal of materials science letters, Vol.18(9), pp.743-746
Publisher: Kluwer Academic Publishers
Number of pages: 4
Identifiers: 9914322309846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Journal article