Abstract
We report the composition- and gate voltage-Induced tuning of transport properties In chemically synthesized Bi-2(Te1-xSex)(3) nanoribbons. It is found that Increasing Se concentration effectively suppresses the bulk carrier transport and induces semiconducting behavior in the temperature-dependent resistance of Bi-2(Te1-xSex)(3) nanoribbons when xis greater than similar to 10%. In Bi-2(Te1-xSex)(3) nanoribbons with x approximate to 20%, gate voltage enables ambipolar modulation of resistance (or conductance) In samples with thicknesses around or larger than 100 nm, Indicating significantly enhanced contribution In transport from the gapless surface states.