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An L-/S-Band SPDT Switch With 30-dBm OP1dB and 33-dB Isolation in CMOS SOI
Journal article   Peer reviewed

An L-/S-Band SPDT Switch With 30-dBm OP1dB and 33-dB Isolation in CMOS SOI

Xin Wang, Genyin Ma, Fanyi Meng, Shilin Shi, Keping Wang, Kaixue Ma and Kiat Seng Yeo
IEEE microwave and wireless technology letters (Print), Vol.33(11), pp.1529-1531
01/11/2023
DOI: https://doi.org/10.1109/LMWT.2023.3313168

Abstract

Engineering Engineering, Electrical & Electronic Science & Technology Technology
This letter presents a 0.5-4.5-GHz (L-/S-band) watt-level single-pole double-throw (SPDT) switch in 0.13-mu m CMOS SOI technology from the GlobalFoundries (GF). This letter investigates the feasible methods to improve the power handling capacity of the FET switches circuits and analyzes the adopted structure of stacked FETs with independent biasing technique in detail. The proposed switch features 30.1-dBm OP1 dB at 3.5 GHz, better than 1.22-dB insertion loss (IL), and 33-dB isolation over the entire bandwidth, which meets the requirements of high-power handling of the fifth-generation communication system. The active chip area of the designed SPDT is compact with a size of only 0.78 x 0.38 mm(2).

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