Abstract
We demonstrate a complementary metal-oxide-semiconductor (CMOS)-compatible optical parametric Bragg amplifier on an ultra-silicon-rich nitride chip. The amplifier design incorporates advantageous group index properties in a nonlinear Bragg grating to circumvent phase matching limitations arising from the bulk material and waveguide dispersion. The grating structure further augments the effective nonlinear parameter of 800 W-1/m, considerably lowering the power required for the observation of strong parametric gain. On/off optical parametric gain of 20 dB is achieved using a low peak power of 1.6 W, in good agreement with numerical calculations. This represents a 7 dB improvement in the parametric gain compared to the absence of grating enhancement which is attributed to the Bragg grating induced superior phase matching.