Abstract
We realize and numerically demonstrate the analogue of electromagnetically induced transparency (EIT) with a high-Q factor in a metal-dielectric bilayer terahertz metamaterial (MM) via bright-bright mode coupling and bright-dark mode coupling. The dielectric MM with silicon dimer rectangular-ring-resonator (Si-DRR) supports either a bright high-Q toroidal dipole resonance (TD) or a dark TD with infinite Q value, while plasmonic MM with metallic rectangular-ring-resonator (M-RR) supports a low-Q electric dipole resonance (ED). The results show that the near-field coupling between the dark TD and bright ED behaves just as that between the two bright modes, which is dependent on the Q factor of the TD resonance. Further, due to the greatly enhanced near-field coupling between the bright ED and dark TD, the coupling distance is significantly extended to about 1.9 times of the wavelength (in media), and robust EIT with large peak value over 0.9 and high Q-factor is achieved. The proposed bilayer MM provides a new EIT platform for design and applications in high-Q cavities, sensing, and slow-light based devices.We realize and numerically demonstrate the analogue of electromagnetically induced transparency (EIT) with a high-Q factor in a metal-dielectric bilayer terahertz metamaterial (MM) via bright-bright mode coupling and bright-dark mode coupling. The dielectric MM with silicon dimer rectangular-ring-resonator (Si-DRR) supports either a bright high-Q toroidal dipole resonance (TD) or a dark TD with infinite Q value, while plasmonic MM with metallic rectangular-ring-resonator (M-RR) supports a low-Q electric dipole resonance (ED). The results show that the near-field coupling between the dark TD and bright ED behaves just as that between the two bright modes, which is dependent on the Q factor of the TD resonance. Further, due to the greatly enhanced near-field coupling between the bright ED and dark TD, the coupling distance is significantly extended to about 1.9 times of the wavelength (in media), and robust EIT with large peak value over 0.9 and high Q-factor is achieved. The proposed bilayer MM provides a new EIT platform for design and applications in high-Q cavities, sensing, and slow-light based devices.