Abstract
We investigate correlated gate (I-G) and drain (I-D) random telegraph noise phenomena observed in post breakdown regime on nMOSFET TiN/HfLaO/SiOx gate-stacks. We observe two different I-G-I-D correlation patterns (i.e., of the same and opposite polarities) that we attributed to charge trapping into oxygen vacancy traps of different kinds located in the SiOx close to the Si/SiOx interface. Results reported in this letter provide useful information for improving the understanding of I-G/I-D RTN phenomena and its impact on the reliability of post-SBD nanometer MOSFETs.