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Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry
Journal article   Peer reviewed

Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry

D. Mangelinck, P.S. Lee, T. Osipowitcz and K.L. Pey
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, Vol.215(3), pp.495-500
01/02/2004
DOI: https://doi.org/10.1016/j.nimb.2003.08.040

Abstract

Characterization MOS Rutherford backscattering spectrometry Silicide Sub-micron devices
A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The method has been verified with Ni/Pt laterally non-uniform layers on (1 0 0)Si substrate and has been applied to characterize the formation of Ni silicide in structures similar to metal oxide semiconductor (MOS) transistors. It is shown that the analysis of devices with a linewidth as low as 0.25 μm is possible using micro RBS and the method of simulation that we have developed.

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