Abstract
We carry out a theoretical analysis of wetting layer effect on band-edge profiles and electronic structures of InAs/GaAs truncated-pyramid quantum dots, including the strain effect. A combination of an analytical strain model and an eight-band Fourier transform-based k center dot p method is adopted in the calculation. Strain modified band-edge profiles indicates that wetting layer widens the potential well inside the dot region. Wetting layer changes ground-state energy significantly whereas modifies probability density function only a little. The main acting region of wetting layer is just underneath the base of the dot. Wetting layer redistributes probability density functions of the lowest electron state and probability density functions of highest hole state differently because of the different action of quantum confinement on electrons and holes.