Abstract
We show a method for studying diffusion barriers for phase change memory devices. The method involves placing a barrier layer between a phase change material like Ge2Sb2Te5 and Fe and taking note of the magnetization changes of the Fe layer before and after anneal. This results in a fast, sensitive but qualitative measure of various diffusion barriers. Based on this analysis, Ru was found to be good diffusion barrier comparable to the conventional TiW, while Pt is a poor barrier. These results were then reconfirmed by X-ray photoelectron spectroscopy depth studies. (C) 2013 AIP Publishing LLC.