Abstract
Ballistic electron emission microscopy/spectroscopy (BEEM/S), a three-terminal scanning tunneling microscopy (STM) technique is used to study charge transport across an Au/graphene-oxide/modified-silicon (Au/GO/m-Si) stack with nanoscale resolution. The Au/GO interface is found to be non-homogeneous with an average injection barrier of 1.0 eV for electrons and 0.5 eV for holes. These measurements will be useful for device design in the area of graphene-related electronics. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.013202ssl] All rights reserved.