Abstract
The conduction type of P doped ZnO thin films using
Zn
3
P
2
dopant source can be controlled by adjusting the oxygen partial pressure by means of radio-frequency sputtering. Under an optimal oxygen partial pressure of 5%,
p
-type ZnO thin films were obtained with a hole concentration of
1.93
×
10
16
-
3.84
×
10
19
cm
−
3
. Under a growth condition of extremely low oxygen partial pressure, P doped ZnO thin films exhibit
n
-type conduction with a hole concentration of
8.34
×
10
17
-
3.1
×
10
19
cm
−
3
. This research not only achieved significant technical advance in the fabrication of
p
-type ZnO but also gained critical advance in fundamental understanding of the governing mechanism of
p
-type ZnO.