Correction to "Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs"

Journal article

Peer reviewed

C.H. Tung, K.L. Pey, W.H. Lin and M.K. Radhakrishnan

IEEE electron device letters, Vol.23(11), pp.676-676

11/2002

Abstract

Dielectrics

Epitaxial growth

Instruments

Microelectronics

MOSFET circuits

Semiconductor device manufacture

Silicon

Stress

Substrates

In the above-named work the Fig 1 caption was incorrect. The figure is presented with a corrected caption.

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Title: Correction to "Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs"
Creators - without role: C.H. Tung - Institute of Microelectronics
K.L. Pey - Nanyang Technological University
W.H. Lin - Singapore Institute of Manufacturing Technology
M.K. Radhakrishnan - Institute of Microelectronics
Publication Details: IEEE electron device letters, Vol.23(11), pp.676-676
Publisher: IEEE
Number of pages: 1
Identifiers: 9914317709846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Journal article