Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM

Journal article

Peer reviewed

K.L Pey, C.H. Tung, M.K. Radhakrishnan, L.J. Tang, Y. Sun, X.D. Wang and W.H. Lin

Microelectronics and reliability, Vol.43(9), pp.1471-1476

01/09/2003

Metrics

1 Record Views

Title: Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM
Creators - without role: K.L Pey - Nanyang Technological University
C.H. Tung - Singapore Science Park
M.K. Radhakrishnan - National University of Singapore
L.J. Tang - Nanyang Technological University
Y. Sun - Nanyang Technological University
X.D. Wang - Nanyang Technological University
W.H. Lin - Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D Street 2, Singapore 738406
Publication Details: Microelectronics and reliability, Vol.43(9), pp.1471-1476
Publisher: Elsevier Ltd
Number of pages: 6
Identifiers: 9914329909846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Journal article