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Crystalline amorphous semiconductor superlattice
Journal article   Peer reviewed

Crystalline amorphous semiconductor superlattice

T. C. Chong, L. P. Shi, X. Q. Wei, R. Zhao, H. K. Lee, P. Yang and A. Y. Du
Physical review letters, Vol.100(13), p.136101
04/04/2008
PMID: 18517969

Abstract

Physical Sciences Physics Physics, Multidisciplinary Science & Technology
A new class of superlattice, crystalline amorphous superlattice (CASL), by alternatively depositing two semiconductor materials, is proposed. CASL displays three states depending on the component materials' phase: both polycrystalline phases, both amorphous phases, and one polycrystalline phase while another amorphous phase. Using materials capable of reversible phase transition, CASL can demonstrate reversibility among three states. GeTe/Sb(2)Te(3) CASL has been synthesized and proved by x-ray reflectometry and TEM results. The reversible transition among three states induced by electrical and laser pulse was observed. The changes in the optical absorption edge, electrical resistivity, thermal conductivity, and crystallization temperature as a function of layer thickness are interpreted as quantum or nanoeffects. The unique properties of CASL enable the design of materials with specific properties.

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