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Current dependence of pulsations in semiconductor lasers due to photon induced modulation of optical loss
Journal article   Peer reviewed

Current dependence of pulsations in semiconductor lasers due to photon induced modulation of optical loss

Soo-Jin Chua, T. Chong and Department of Electrical Engineering, National University of Singapore, Kent Ridge, Singapore 0511
IEEE journal of quantum electronics, Vol.20(11), pp.1243-1246
01/11/1984

Abstract

Aging Deformable models DH-HEMTs Equations Laser modes Nonlinear optics Optical losses Optical modulation Physics Semiconductor lasers
Pulsations in semiconductor lasers are frequently observed to occur within a range of injection currents above threshold. A model is proposed to account for the existence of the current range and attributes it to a critical optical power level at which photon induced modulation of optical loss takes place, such as due to the effect of self-focusing or lateral mode deformation. This value is estimated to be 0.36 \times 10^{15} photons- cm -3 for double heterostructure oxide-striped lasers.

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