DC model for BiMOS structure and its adaptation to a circuit simulation environment

Journal article

S. S Rofail, K.-S Yeo and K.-W Chew

IEE proceedings. Circuits, devices, and systems, Vol.146(2), pp.83-89

1999

Abstract

Applied sciences

Design. Technologies. Operation analysis. Testing

Electronics

Exact sciences and technology

Integrated circuits

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: DC model for BiMOS structure and its adaptation to a circuit simulation environment
Creators - without role: S. S Rofail - Nanyang Technological University
K.-S Yeo - Nanyang Technological University
K.-W Chew - Nanyang Technological University
Publication Details: IEE proceedings. Circuits, devices, and systems, Vol.146(2), pp.83-89
Publisher: Institution of Electrical Engineers
Number of pages: 7
Identifiers: 9912398909846
Academic Unit: Office of Provost
Language: English
Resource Type: Journal article