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Design of Oscillator-Based Reconfigurable Modulator With High-Q FBAR Resonators Supporting Fast OOK/BFSK/ BPSK Modulation
Journal article   Peer reviewed

Design of Oscillator-Based Reconfigurable Modulator With High-Q FBAR Resonators Supporting Fast OOK/BFSK/ BPSK Modulation

Dong Liang, Hui Zhang, Yetong Wang, Linhao Ma, Shiyue Ma, Zhijun Zhou, Fanyi Meng, Kaixue Ma and Keping Wang
IEEE transactions on circuits and systems. I, Regular papers, Vol.72(6), pp.2543-2555
01/06/2025

Abstract

adaptive fast switch BFSK Binary phase shift keying BPSK Circuits Energy efficiency FBAR Film bulk acoustic resonators Modulation OOK oscillator-based modulator Oscillators Phase modulation polarity swap switch Resonators Switching circuits Transistors
An oscillator-based reconfigurable modulator is proposed to support multi-mode and fast modulation. A direct-modulation structure composed of the cross-coupled oscillator with the fast-switched film bulk acoustic resonator (FBAR) is used to enhance the frequency stability under fast OOK/BFSK modulation. To avoid extra phase-reversal circuitry, a polarity-swapped switching structure is employed in the differential branches of the modulator to achieve energy-efficient BPSK modulation, and this structure is also reused as a buffer stage for OOK/BFSK modulation to avoid the loading effect. In addition, an adaptive fast-switching technique is also proposed to improve OOK/BFSK modulation data rate and energy efficiency. The modulator is fabricated in a 180 nm CMOS technology. The free-running oscillation frequencies with two FBARs are 962 MHz and 990 MHz, and the measured phase noises are -137.3 dBc/Hz@1MHz and -137.1 dBc/Hz@1MHz, respectively. For OOK/BFSK/BPSK modulation, the proposed modulator demonstrated 280/325/67.6 pJ/bit energy efficiency and 5.63/4.20/5.55 % rms EVM with 10/10/50 Mbps data rates.

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