Dielectric Breakdown Induced Epitaxy in Ultrathin Gate Oxide - A Reliability Concern

Journal article

Dielectric Breakdown Induced Epitaxy in Ultrathin Gate Oxide - A Reliability Concern

K. Tung Pey and Kin Leong Pey

Technical digest - International Electron Devices Meeting, pp.163-166

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Title: Dielectric Breakdown Induced Epitaxy in Ultrathin Gate Oxide - A Reliability Concern
Creators - without role: K. Tung Pey
Kin Leong Pey - Temasek Lab
Publication Details: Technical digest - International Electron Devices Meeting, pp.163-166
Publisher: IEEE; 1998
Identifiers: 9914221709846
Academic Unit: Engineering Product Development (EPD); Temasek Lab
Language: English
Resource Type: Journal article