Diluted magnetic semiconductor Ge 1− x Mn x Te films prepared by molecular beam epitaxy

W.Q. Chen; K.L. Teo; M.B.A. Jalil; Y.F. Liew; T.C. Chong

doi:10.1016/j.tsf.2005.10.023

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Diluted magnetic semiconductor Ge 1− x Mn x Te films prepared by molecular beam epitaxy

Journal article

Peer reviewed

Diluted magnetic semiconductor Ge 1− x Mn x Te films prepared by molecular beam epitaxy

W.Q. Chen, K.L. Teo, M.B.A. Jalil, Y.F. Liew and T.C. Chong

Thin solid films, Vol.505(1), pp.145-147

2006

DOI: https://doi.org/10.1016/j.tsf.2005.10.023

Abstract

Diluted magnetic semiconductor

Ge 1− xMn xTe

Molecular beam epitaxy

We report the growth of IV–VI diluted magnetic semiconductor Ge 1− x Mn x Te thin films on BaF 2 (111) substrates with high Mn ion concentration ( x = 0.98) by solid-source molecular-beam epitaxy. The film structure and orientation were characterized by in-situ reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD). The chemical concentration was determined by X-ray Photoelectron Spectroscopy (XPS). The thin film shows ferromagnetic ordering at 130 K, as determined from temperature-dependent magnetization.

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Title: Diluted magnetic semiconductor Ge 1− x Mn x Te films prepared by molecular beam epitaxy
Creators - without role: W.Q. Chen - National University of Singapore
K.L. Teo - National University of Singapore
M.B.A. Jalil - National University of Singapore
Y.F. Liew - Duke-NUS Medical School
T.C. Chong - Data Storage Institute
Publication Details: Thin solid films, Vol.505(1), pp.145-147
Publisher: Elsevier B.V
Identifiers: 9911275809846
Academic Unit: Temasek Lab
Language: English
Resource Type: Journal article

Diluted magnetic semiconductor Ge 1− x Mn x Te films prepared by molecular beam epitaxy

Abstract

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